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Schematic diagram and photograph of the proposed Metglas/Mn-doped PMN-PT bimorph heterostructure.
(a) ME coefficient α E as a function of dc magnetic bias field H dc for various layers of Metglas. The numbers indicate the number of Metglas layers (N). (b) Maximum α E and the required optimal H dc dependence of the number of Metglas of Metglas layers N.
(a) ME charge coefficient α Q as a function of frequency f and (b) the close-view for 1 Hz < f < 1 kHz. (c) Impedance spectrum of the heterostructure over the frequency rage 70 Hz < f < 1 kHz.
(a) Measured and estimated noise charge density and (b) equivalent magnetic noise for the multi-push-pull mode Metglas/PMN-PT sensor unit (Ref. 3) and the proposed one over the frequency range of 0.125 Hz < f < 100 Hz. The noise contributions, including constituent dielectric loss and dc resistance loss, are compared.
Property parameters for multi-push-pull mode Metglas/PMN-PT and L-T mode Metglas/Mn-doped PMN-PT sensors and the related pure single crystals.
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