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Negative capacitance induced by redistribution of oxygen vacancies in the fatigued BiFeO3-based thin film
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10.1063/1.4733982
/content/aip/journal/apl/101/2/10.1063/1.4733982
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/2/10.1063/1.4733982
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Fatigue behavior of BLFM thin film measured at room temperature, where four different switching stages are selected and marked as a, b, c, and d, respectively. (b) The variation of capacitance as a function of frequency for the BLFM thin film that was subjected to different numbers of switching cycles and the inset schematically shows the charge reservoir of formed during the fatigue process.

Image of FIG. 2.
FIG. 2.

(a) The frequency-dependent capacitance of the BLFM thin film (fatigued for 1010 cycles) as a function of temperature. (b) The corresponding negative differential susceptance derived from the capacitance data in (a) and the arrows indicate the peak frequency . The inset (b) shows the Arrhenius plots of the hopping frequency against temperature.

Image of FIG. 3.
FIG. 3.

The frequency-dependent capacitance of the BLFM thin film (fatigued for 1010 cycles) as a function of bias voltage.

Image of FIG. 4.
FIG. 4.

(a) Semi-logarithmic plot of the negative differential susceptance derived from the capacitance data in Fig. 3. The inset shows an enlarged image of the rectangular area. The arrows indicate the corresponding peak frequency . (b) The mobility of charge defects in the BLFM thin film is plotted as a function of , where the solid line is fitted to the equation for the hopping transport in a spatially correlated potential.

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/content/aip/journal/apl/101/2/10.1063/1.4733982
2012-07-10
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Negative capacitance induced by redistribution of oxygen vacancies in the fatigued BiFeO3-based thin film
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/2/10.1063/1.4733982
10.1063/1.4733982
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