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(a) Fatigue behavior of BLFM thin film measured at room temperature, where four different switching stages are selected and marked as a, b, c, and d, respectively. (b) The variation of capacitance as a function of frequency for the BLFM thin film that was subjected to different numbers of switching cycles and the inset schematically shows the charge reservoir of formed during the fatigue process.
(a) The frequency-dependent capacitance of the BLFM thin film (fatigued for 1010 cycles) as a function of temperature. (b) The corresponding negative differential susceptance derived from the capacitance data in (a) and the arrows indicate the peak frequency . The inset (b) shows the Arrhenius plots of the hopping frequency against temperature.
The frequency-dependent capacitance of the BLFM thin film (fatigued for 1010 cycles) as a function of bias voltage.
(a) Semi-logarithmic plot of the negative differential susceptance derived from the capacitance data in Fig. 3. The inset shows an enlarged image of the rectangular area. The arrows indicate the corresponding peak frequency . (b) The mobility of charge defects in the BLFM thin film is plotted as a function of , where the solid line is fitted to the equation for the hopping transport in a spatially correlated potential.
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