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45°-tilted SEM image of the MQW SCs with p-GaN microdomes. The inset shows the cross-sectional SEM image.
Specular reflection measured on the MQW SCs with flat and microdome-like p-GaN surfaces.
Time-averaged and normalized TE electric field distribution simulated by FDTD analysis with two surface structures: (a) flat and (b) p-GaN microdomes. (c) Normalized optical power, integrated over the MQW region, as a function of times for the two kinds of SCs at 400 nm wavelength.
J–V characteristics measured on the MQW SCs with two kinds of surface structures. The inset table shows PV characteristics of InGaN MQW SCs with two kinds of surface structures. FF is the fill factor of SCs, which is defined as the ratio of the actual maximum obtainable power, to the product of Jsc and Voc .
(a) EQE curves and (b) IQE curves for the SCs with two kinds of surface structures.
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