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Microdome InGaN-based multiple quantum well solar cells
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10.1063/1.4734380
/content/aip/journal/apl/101/2/10.1063/1.4734380
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/2/10.1063/1.4734380
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

45°-tilted SEM image of the MQW SCs with p-GaN microdomes. The inset shows the cross-sectional SEM image.

Image of FIG. 2.
FIG. 2.

Specular reflection measured on the MQW SCs with flat and microdome-like p-GaN surfaces.

Image of FIG. 3.
FIG. 3.

Time-averaged and normalized TE electric field distribution simulated by FDTD analysis with two surface structures: (a) flat and (b) p-GaN microdomes. (c) Normalized optical power, integrated over the MQW region, as a function of times for the two kinds of SCs at 400 nm wavelength.

Image of FIG. 4.
FIG. 4.

J–V characteristics measured on the MQW SCs with two kinds of surface structures. The inset table shows PV characteristics of InGaN MQW SCs with two kinds of surface structures. FF is the fill factor of SCs, which is defined as the ratio of the actual maximum obtainable power, to the product of Jsc and Voc .

Image of FIG. 5.
FIG. 5.

(a) EQE curves and (b) IQE curves for the SCs with two kinds of surface structures.

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/content/aip/journal/apl/101/2/10.1063/1.4734380
2012-07-10
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Microdome InGaN-based multiple quantum well solar cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/2/10.1063/1.4734380
10.1063/1.4734380
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