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Sensitive gas sensor embedded in a vertical polymer space-charge-limited transistor
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12.The SCLT characteristics simulation is made based on the device structure shown in Fig. 2. The thicknesses of PVP, Al grid, Al2O3, and P3HT are 200, 40, 10, and 400 nm, respectively. The opening diameter is 100 nm. The highest occupied molecular orbital and lowest unoccupied molecular orbital levels of P3HT are 5.2 and 3.0 eV. The work functions of emitter and collector are 5.2 and 4.3 eV. The hole mobility and electron mobility in P3HT are 10−5 and 10−6 cm2/V s.
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We report a very sensitive gas sensor embedded in a vertical polymer space-charge-limited transistor. The oxidizing and reducing gases act as electron dedoping and electron doping agents on the transistor active layer to change the potential distribution in the vertical channel and hence to change the output current density. With a 30-ppb detection limit to ammonia, the sensor can be used for non-invasive breath monitor in point-of-care applications. The integration of a sensitive gas sensor and a low-operation-voltage transistor in one single device also facilitates the development of low-cost and low-power-consumption sensor array.
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