Full text loading...
FESEM images of (a) bare GaAs NWs, (b) GaAs/AlxGa1−xAs core-shell NWs, and (c) GaAs/AlxGa1−xAs/GaAs (xv = 0.5) core-shell-cap NWs. Scale bars are 1 μm.
(a) Typical room temperature PL spectrum from single GaAs/AlxGa1−xAs (xv = 0.5) NWs showing a peak emission at 1.425 eV. The inset shows an optical microscope image of the excited NW. The scale bar is 6 μm. (b) Low power time-resolved PL at the peak emission energy of 1.425 eV from two single GaAs/AlxGa1−xAs (xv = 0.5) NWs. Mono-exponential fits are shown for each decay, with τmc as shown.
Temperature dependence of the carrier lifetimes of GaAs/AlxGa1−xAs (xv = 0.5) NWs. Lifetimes are scattered around 1 ns and do not show obvious temperature dependency.
Typical room temperature (a) single NW PL spectrum and (b) time-resolved PL transient from two single GaAs/AlxGa1−xAs NWs with AlxGa1−xAs (xv = 0.5) shell grown at 700 °C. Mono-exponential fits are shown for each decay, with τmc as shown.
Article metrics loading...