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Nanostructure Ag dots for improving thermal stability of Ag reflector for GaN-based light-emitting diodes
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10.1063/1.4737015
/content/aip/journal/apl/101/2/10.1063/1.4737015
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/2/10.1063/1.4737015
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AFM images of a 10-nm-thick Ag layer (a) before and (b) after being annealed at 300 °C for 1 min in air.

Image of FIG. 2.
FIG. 2.

Reflectance of Ag contacts with and without Ag nano-dots as a function of annealing temperature.

Image of FIG. 3.
FIG. 3.

Temperature dependence of the characteristics of blue InGaN/GaN MQW LEDs fabricated with Ag only and nano-dot Ag reflectors.

Image of FIG. 4.
FIG. 4.

Light output-current (L-I) characteristics of LEDs fabricated with Ag only and nano-dot Ag reflectors as a function of the forward drive current.

Image of FIG. 5.
FIG. 5.

SEM images obtained from Ag only and nano-dot Ag contacts (a) and (b) before and (c) and (d) after annealing at 400 °C for 1 min in air, respectively. The arrows in the inset of (d) indicate micro-twins.

Image of FIG. 6.
FIG. 6.

In-plane phi scans for GaN (102) and Ag (200) reflections in Ag only and nano-dot Ag samples on GaN before and after annealing at 400 °C.

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/content/aip/journal/apl/101/2/10.1063/1.4737015
2012-07-13
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nanostructure Ag dots for improving thermal stability of Ag reflector for GaN-based light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/2/10.1063/1.4737015
10.1063/1.4737015
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