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AFM images of a 10-nm-thick Ag layer (a) before and (b) after being annealed at 300 °C for 1 min in air.
Reflectance of Ag contacts with and without Ag nano-dots as a function of annealing temperature.
Temperature dependence of the I-V characteristics of blue InGaN/GaN MQW LEDs fabricated with Ag only and nano-dot Ag reflectors.
Light output-current (L-I) characteristics of LEDs fabricated with Ag only and nano-dot Ag reflectors as a function of the forward drive current.
SEM images obtained from Ag only and nano-dot Ag contacts (a) and (b) before and (c) and (d) after annealing at 400 °C for 1 min in air, respectively. The arrows in the inset of (d) indicate micro-twins.
In-plane phi scans for GaN (102) and Ag (200) reflections in Ag only and nano-dot Ag samples on GaN before and after annealing at 400 °C.
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