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Reactive-ion-etched graphene nanoribbons on a hexagonal boron nitride substrate
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Scanning force microscopy image (topography) of one of the three micron-sized single layer graphene devices. The graphene islocally flat but some residues from fabricationare visible (white blobs – most probably PMMA). (b) Sheet resistance () of the device in Fig. 1(a) measured as a function of back-gate voltage (contact resistances subtracted). The red solid curve was obtained in a first cooldown where the sample consisted of only micron-sized devices. The blue dashed curve is from a second cooldown for the same micron-sized stripe (not etched – control group) where most of the other bulk devices were etched into nanoribbons. (c) Same data as in Fig. 1(b) but plotted as sheet conductance: . (d) Two-point conductance as a function of back-gate and perpendicular magnetic field (contact resistance of less than subtracted).

Image of FIG. 2.
FIG. 2.

(a) and (b) Scanning force microscopy image (phase) of two representative nanoribbons. (c) Conductance of three different ribbons that have comparable dimensions (1 mV bias applied). The curves are vertically offset by for clarity. (d) Differential conductance as a function of symmetric source-drain bias and back-gate voltage for the blue ribbon trace (ribbon#1) in Fig. 2(c).

Image of FIG. 3.
FIG. 3.

(a) Temperature dependent measurements of ribbon#6 in the region of suppressed conductance. The lowest black curve was recorded at a temperature of 4.2 K. The uppermost black curve corresponds to 25 K. The curves were recorded with zero DC bias and 0.35 mV AC modulation to prevent heating. (b) Differential conductance for the same region in back-gate. (c) Same measurement as in Fig. 3(a) but 4 days earlier.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reactive-ion-etched graphene nanoribbons on a hexagonal boron nitride substrate