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Unipolar resistive switching behavior of Pt/Li x Zn1− x O/Pt resistive random access memory devices controlled by various defect types
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10.1063/1.4766725
/content/aip/journal/apl/101/20/10.1063/1.4766725
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/20/10.1063/1.4766725
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Typical I-V characteristics of ReRAM device based on Pt/Li0.06Zn0.94O/Pt structure. The right inset shows configuration of LZO (Li x Zn1− x O) ReRAM device and the left inset shows the XRD patterns on a log scale for the Li0.06Zn0.94O film.

Image of FIG. 2.
FIG. 2.

I-V plots of (a) ZnO, (b) 3 at. % LZO, and (c) 6 at. % LZO films. The insets show that the conducting mechanism of HRS in a high electric field is Poole-Frenkel emission by curve fitting for (d) ZnO, (e) 3 at. % LZO, and (f) 6 at. % LZO films.

Image of FIG. 3.
FIG. 3.

XPS spectra of O 1s core levels in (a) ZnO, (b) 3 at. % LZO, and (c) 6 at. % LZO films. The insets show the XPS spectra of Li 1s core levels for 3 at. % and 6 at. % LZO films.

Image of FIG. 4.
FIG. 4.

(a) Energy diagrams of Pt/ZnO/Pt structure. Electron transmission conditions under positive bias and defect energy levels in the bandgap of (b) ZnO, (c) 3 at. % LZO, (d) 6 at. % LZO, and (e) 9at. % LZO films.

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/content/aip/journal/apl/101/20/10.1063/1.4766725
2012-11-12
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Unipolar resistive switching behavior of Pt/LixZn1−xO/Pt resistive random access memory devices controlled by various defect types
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/20/10.1063/1.4766725
10.1063/1.4766725
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