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Typical I-V characteristics of ReRAM device based on Pt/Li0.06Zn0.94O/Pt structure. The right inset shows configuration of LZO (Li x Zn1− x O) ReRAM device and the left inset shows the XRD patterns on a log scale for the Li0.06Zn0.94O film.
I-V plots of (a) ZnO, (b) 3 at. % LZO, and (c) 6 at. % LZO films. The insets show that the conducting mechanism of HRS in a high electric field is Poole-Frenkel emission by curve fitting for (d) ZnO, (e) 3 at. % LZO, and (f) 6 at. % LZO films.
XPS spectra of O 1s core levels in (a) ZnO, (b) 3 at. % LZO, and (c) 6 at. % LZO films. The insets show the XPS spectra of Li 1s core levels for 3 at. % and 6 at. % LZO films.
(a) Energy diagrams of Pt/ZnO/Pt structure. Electron transmission conditions under positive bias and defect energy levels in the bandgap of (b) ZnO, (c) 3 at. % LZO, (d) 6 at. % LZO, and (e) 9at. % LZO films.
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