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High-mobility p-channel metal-oxide-semiconductor field-effect transistors on Ge-on-insulator structures formed by lateral liquid-phase epitaxy
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10.1063/1.4766917
/content/aip/journal/apl/101/20/10.1063/1.4766917
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/20/10.1063/1.4766917
/content/aip/journal/apl/101/20/10.1063/1.4766917
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/content/aip/journal/apl/101/20/10.1063/1.4766917
2012-11-13
2014-08-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-mobility p-channel metal-oxide-semiconductor field-effect transistors on Ge-on-insulator structures formed by lateral liquid-phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/20/10.1063/1.4766917
10.1063/1.4766917
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