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Device structure for PSWS measurements (a) and the in-plane strain measurement in CoFeB/(011) PMN-PT/Au sandwich structure (b). The inset in Fig. 1(b) is a magnification of the s-V loop along in-plane 〈01-1〉 direction. The blue curves were drawn to guide eyes to show a inverse butterfly shape.
S12 response map (a) and SW frequency-voltage dependence (b) measured by the VNA in CoFeB/(011) PMN-PT composite structure. (a) was imaged while an external voltage of 150 V was applied. In (b), external voltage was applied between 200 and −200 V.
f 2 as a function of external magnetic field (a) and the change in anisotropy field ΔHani with the applied voltage (b). In (a), open circles are data obtained from PSWS measurements at applied voltages of −200, −150 and −50 V, while solid curves are fitting results according to Eq. (1).
MOKE measurement when the magnetic field with amplitude of 400 Oe was applied along the in-plane 〈01-1〉 direction. Shown are the normalized Kerr rotation hysteresis loops under different voltages (a) and the voltage dependence of Hc (b).
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