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Hybrid FET with graphene and 2DEG resided in GaAs/AlGaAs heterostructures. (a) Schematic illustration of the device structure in the HEMT setup, where graphene is used as gate electrode. (b) GFET setup where 2DEG is used as the backgate electrode. (c) Raman spectrum of graphene on top of GaAs/AlGaAs heterojunctions. (d) Histogram of the surface height distribution taken by AFM for graphene on GaAs (blue squares) and bare GaAs substrate (black circles). (e) Selected traces of as a function of for temperatures T = 0.3, 4.2, and 60 K. The shaded area represents the effective gating range by the 2DEG electrode. (f) Hall response at various at T = 60 K.
(a) Output characteristics vs of HEMT with a graphene gate length of 80 μm and a gate width of 5 μm. (b) The transfer characteristics and transconductance curve of HEMT. A peak of 3.6 μS/μm was measured at and . (c) of GFET as a function of for various back-gate voltages . (d) of GFET as a function of , measured at . The corresponding device transconductance is displayed on the right axis.
(a) A schematic diagram of the device configuration adopted in the simulation. The contact resistance is estimated at about in the experiment. (b) Simulated conduction band profile of GaAs/AlGaAs heterostructure for 0.5 V, (b) 0 V, and (c) −0.6 V.
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