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ZnO-nanorod-array/p-GaN high-performance ultra-violet light emitting devices prepared by simple solution synthesis
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10.1063/1.4764061
/content/aip/journal/apl/101/21/10.1063/1.4764061
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/21/10.1063/1.4764061
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SEM image of a pristine p-GaN/ZnO-nanorods heterostructure showing the random nature of the self-assembled ZnO-nanorods. The inset shows a higher magnification cross-section SEM image.

Image of FIG. 2.
FIG. 2.

The PL spectra of n-ZnO nanorod/p-GaN heterostructure (solid line) and a bare p-GaN substrate (dotted line).

Image of FIG. 3.
FIG. 3.

The current-voltage characteristics of a GaN/ZnO-nanorod heterostructure LED. The inset shows current-voltage curve (solid line) and bias-dependence of the integrated EL intensity in semi-logarithmic scale (solid squares show data points).

Image of FIG. 4.
FIG. 4.

(a) Normalized CL spectra of the p-GaN substrate (solid line) and ZnO-nanorods (dotted line), and (b) normalized EL characteristics of the fabricated GaN/ZnO-nanorod heterostructure LEDs at increasing bias voltages as indicated.

Image of FIG. 5.
FIG. 5.

The EL stability of UV LEDs, plotted as magnitude of EL intensity (383 nm) vs. transient time, at 20 V bias magnitudes and 200 s cycles time.

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/content/aip/journal/apl/101/21/10.1063/1.4764061
2012-11-21
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: ZnO-nanorod-array/p-GaN high-performance ultra-violet light emitting devices prepared by simple solution synthesis
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/21/10.1063/1.4764061
10.1063/1.4764061
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