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SEM image of a pristine p-GaN/ZnO-nanorods heterostructure showing the random nature of the self-assembled ZnO-nanorods. The inset shows a higher magnification cross-section SEM image.
The PL spectra of n-ZnO nanorod/p-GaN heterostructure (solid line) and a bare p-GaN substrate (dotted line).
The current-voltage characteristics of a GaN/ZnO-nanorod heterostructure LED. The inset shows current-voltage curve (solid line) and bias-dependence of the integrated EL intensity in semi-logarithmic scale (solid squares show data points).
(a) Normalized CL spectra of the p-GaN substrate (solid line) and ZnO-nanorods (dotted line), and (b) normalized EL characteristics of the fabricated GaN/ZnO-nanorod heterostructure LEDs at increasing bias voltages as indicated.
The EL stability of UV LEDs, plotted as magnitude of EL intensity (383 nm) vs. transient time, at 20 V bias magnitudes and 200 s cycles time.
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