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(a) Schematic of the fin structure with doping area. (b) TEM image of the fin structure.
TEM images of the observed regions and 3D atom maps for each atom. Dashed lines indicate the (a) bottom region of the As-doped sample, (b) sidewall region of the As-doped sample, and (c) sidewall and corner regions of the P-doped sample.
1D concentration profiles of Si, SiO2, and As in the (a) bottom and (b) sidewall regions of the As-doped samples. The selected region is indicated in each atom map.
1D concentration profiles of Si, SiO2, and P in the (a) sidewall and (b) corner regions of the P-doped sample. The selected regions are indicated in the atom map.
Maximum concentrations of the dopants, SiO2, and atomic O in different regions of the samples are plotted.
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