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Ultrabroadband terahertz conductivity of Si nanocrystal films
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View: Figures


Image of FIG. 1.
FIG. 1.

Time domain reference and differential −−  waveforms for the (a) x = 0.4 and (b) x = 1.2, nanocrystal films. (c) Fourier amplitude spectrum of the reflected THz pulse from the x = 0.4 sample in the absence, (black), and presence, (red), of the pump pulse 2 ps after 400 nm excitation.

Image of FIG. 2.
FIG. 2.

Real (black dots) and imaginary (red dots) components of the conductivity spectrum recorded 2 ps after 400 nm photoexcitation of nanocrystal films with (a)-(g) x = 0.2–1.4, respectively. Black and red lines are best fits from the Drude-Smith model, described in the text.

Image of FIG. 3.
FIG. 3.

Dynamics of the (a) square of the plasma frequency, (b) scattering time, and (c) back-scattering parameter c extracted from Drude-Smith model fit parameters to the complex conductivity data for the x = 0.6 (red dots) and x = 1.2 (blue dots) films.

Image of FIG. 4.
FIG. 4.

(a) Integrated between the frequency interval 2–9 THz demonstrating the percolation transition at the critical volume fraction . The Drude-Smith fit parameters for pump-probe delay of 40 ps: (b) squared plasma frequency, (c) backscatter parameter c and scattering time .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultrabroadband terahertz conductivity of Si nanocrystal films