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In situ atomic layer deposition half cycle study of Al2O3 growth on AlGaN
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10.1063/1.4767520
/content/aip/journal/apl/101/21/10.1063/1.4767520
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/21/10.1063/1.4767520
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Figures

Image of FIG. 1.
FIG. 1.

XPS spectra of the Ga 2p 3/2 (a) and (b) and N 1s (c) and (d) core levels from the native oxide (a) and (c) and HF etched (b) and (d) surfaces, from the initial surfaces, after annealing at 300 °C and each individual ALD half cycle deposition.

Image of FIG. 2.
FIG. 2.

XPS spectra of the Ga 2p 3/2 (a) and (b) and N 1s (c) and (d) core levels from the native oxide (a) and (c) and HF etched (b) and (d) surfaces, from theinitial surfaces, after annealing at 300 °C and after one pulse of TMA. (e)shows the ratio of gallium oxide to the bulk Ga-AlN peak from the Ga 2p spectra, indicating the changes in the gallium oxide present on the surface over the course of the deposition. Error bars were estimated to be ±9% based on the peak deconvolution and fitting procedures employed here.

Image of FIG. 3.
FIG. 3.

Al 2p core level spectra from the native oxide (a) and (c) and HF etched (b) and (d) samples at various stages in the Al2O3 deposition process. Figure 3(e) shows the ratio of Al-O to Al-GaN from the same spectra indicating the change in Al2O3 growth rate with increasing number of ALD cycles. Inset shows the change in ratio during the initial ALD cycles.

Image of FIG. 4.
FIG. 4.

AFM images (3 μm × 3 μm) of the native oxide (a) and (b) and HF etched samples (c) and (d) from the initial surfaces and after 20 cycles of ALD. The contrasts have been adjusted so that all images have the same height scale.

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/content/aip/journal/apl/101/21/10.1063/1.4767520
2012-11-21
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In situ atomic layer deposition half cycle study of Al2O3 growth on AlGaN
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/21/10.1063/1.4767520
10.1063/1.4767520
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