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Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors
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10.1063/1.4767905
/content/aip/journal/apl/101/21/10.1063/1.4767905
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/21/10.1063/1.4767905

Figures

Image of FIG. 1.
FIG. 1.

The schematic diagram of gated diode π-region surface condition at (a) accumulation, (b) depletion, and (c) inversion situation.

Image of FIG. 2.
FIG. 2.

(a) Electrical performance comparison between UPD and UGD with different SiO2 passivation layer thickness. (b) Electrical performance comparison between UPD and GD at saturated gate bias. (c) Correlation between gate bias and SiO2 passivation layer thickness.

Image of FIG. 3.
FIG. 3.

The correlation between the reverse dark current density and gate bias of sample C at different diode operation bias.

Image of FIG. 4.
FIG. 4.

(a) The peak responsivity (at 9.9 μm) and (b) QE at peak responsivity at different diode operation bias at 77 K.

Image of FIG. 5.
FIG. 5.

Detectivity of UPDs, UGDs, and GDs at saturation gate bias calculated at different operation bias. The calculation of detectivity bases on the inset equation, with Ri is the responsivity, J is the dark current density, q is the charge of electron, kb is the Boltzmann constant, T is the temperature, and RA is the differential resistance-area product.

Tables

Generic image for table
Table I.

The differential-resistance-area product at −100 mV (RA−100 mV), saturated gate bias, and peak detectivity (D*) of UPD, UGD, and GD at saturation bias.

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/content/aip/journal/apl/101/21/10.1063/1.4767905
2012-11-21
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/21/10.1063/1.4767905
10.1063/1.4767905
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