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Direct extraction of carrier mobility in graphene field-effect transistor using current-voltage and capacitance-voltage measurements
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10.1063/1.4768690
/content/aip/journal/apl/101/21/10.1063/1.4768690
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/21/10.1063/1.4768690

Figures

Image of FIG. 1.
FIG. 1.

(a) Side-view schematic of a G-FET, and (b) its SEM image. The scale bar is 2 μm. The graphene channel is in the rectangle frame, while the Y2O3 dielectric layer is in the square. The gate width and length are 4.5 μm and 7 μm, respectively, and the separation between source/drain electrodes to the top gate electrode is 1.2 μm. (c) Transfer curves of theG-FET under different back-gate voltage which is 60 V, 0 V, and −60 V, respectively, from left to right. (d) The gate voltage dependent gate capacitance curve, in which the Dirac voltage is drifted to zero manually.

Image of FIG. 2.
FIG. 2.

The detailed process for retrieving carrier mobility and other parameters from - and - data of G-FET at back gate  = 0 V. The Dirac voltage is translated to zero intentionally for simple. (a) dependent 1/n calculated from Fig. 1(d). (b) dependent total channel resistance calculated from Fig. 1(c). (c) vs 1/n at n-branch of G-FET. The retrieved parameters are  = 8.2 × 1011 cm−2, slope = 7.31 × 1015 Ω cm2,  = 3.56 kΩ. (d) vs 1/n at p-branch of G-FET. The retrieved parameters are  = 8.0 × 1011 cm−2, slope = 7.21 × 1015 Ω cm2,  = 3.50 kΩ. (e) dependent carrier density n calculated from the retrieved parameters. (f) The experimental - relation along with the fitted result. (g) - curve fitted through conventional method developed in Ref. 11 with  = 1 × 106 m/s. (h) - curve fitted with  = 1.2 × 106 m/s.

Image of FIG. 3.
FIG. 3.

The retrieved carrier mobility and other parameters from - and - data of G-FET at back gate  = −60 V and 60 V. (a) dependent total channel resistance calculated from Fig. 1(c) under  = −60 V. (b) vs 1/n at n-branch of the G-FET under  = −60 V. The retrieved parameters are  = 9.33 × 1011 cm−2, slope = 9.63 × 1015 Ω cm2,  = 1.83 kΩ. (c) dependent total channel resistance calculated from Fig. 1(c) under  = 60 V. (d) vs 1/n at p-branch of G-FET under  = −60 V. The retrieved parameters are  = 1.04 × 1012 cm−2, slope = 8.84 × 1015 Ω cm2,  = 2.36 kΩ.

Tables

Generic image for table
Table I.

Extracted parameters of G-FET under different back gate voltages.

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/content/aip/journal/apl/101/21/10.1063/1.4768690
2012-11-21
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Direct extraction of carrier mobility in graphene field-effect transistor using current-voltage and capacitance-voltage measurements
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/21/10.1063/1.4768690
10.1063/1.4768690
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