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Identification of quantum confined interband transitions in type-II InAs/GaSb superlattices using polarization sensitive photocurrent spectroscopy
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10.1063/1.4767358
/content/aip/journal/apl/101/22/10.1063/1.4767358
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/22/10.1063/1.4767358
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Structure schematic of (a) MWIR and (b) LWIR InAs/GaSb type-II strained layer superlattice photodiode.

Image of FIG. 2.
FIG. 2.

(a) Schematic of the structure of device under test and the orientation of electric field with respect to the device. TE polarization is the polarization of light in plane of T2SL while TM is in the growth direction. (b) Picture of device mounted inside the cryostat for measurements at 77 K, and a zoomed in image of the device mounted in the chip carrier at 45° angle.

Image of FIG. 3.
FIG. 3.

(a) Unpolarized, (b) TE, and TM photocurrent spectra for MWIR photodiode. (c) Calculated bandstructure of T2SL showing dispersion of energy with respect to electron wavevector in plane (kxy) and in the growth direction (kz) for MWIR T2SL.

Image of FIG. 4.
FIG. 4.

(a) Unpolarized, (b) TE, and TM photocurrent spectra for LWIR photodiode. (c) Calculated bandstructure of T2SL showing dispersion of energy with respect to electron wavevector in plane (kxy) and in the growth direction (kz) for LWIR T2SL.

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/content/aip/journal/apl/101/22/10.1063/1.4767358
2012-11-29
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Identification of quantum confined interband transitions in type-II InAs/GaSb superlattices using polarization sensitive photocurrent spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/22/10.1063/1.4767358
10.1063/1.4767358
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