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(a) AFM image of the bare BOPET substrate and the height profile across the line drawn in the image. (b) XRD pattern reordered for the BOPET substrate. The inset shows the molecular structure of PET. (c) AFM image of the 20 nm thick CoPc film grown on BOPET substrate and the height profile across the line drawn in the image. (d) XRD pattern reordered for theCoPc films grown over BOPET substrate.
(a) X-ray pole figure contour recorded for the (200) Bragg peak of 20 nm thick CoPc films grown on BOPET substrate. (b) I-Ψ plot at Φ = 171° derived from the pole figure data.
(a) Variation of CoPc film resistance and strain (ε) as a function of radius of curvature (r). Lower inset shows the schematic of the bending arrangement. Upper inset shows the photograph of CoPc films coated with patterned gold electrodes on BOPET substrate under a bent condition. (b) Change in CoPc film resistance with time upon subjecting to the bending at different r, which on releasing the bending reverts back to the flat position resistance (shown by red dotted line).
(a) Temperature dependent J-V characteristics of flexible CoPc films under flat condition. Inset shows the Log-log plots of J-V characteristics. (b) Temperature dependence of the mobility (μ) obtained from the analysis of SCLC characteristics. Inset shows the Log-log plot of J versus d (electrode separation).
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