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The suppressed negative bias illumination-induced instability in In-Ga-Zn–O thin film transistors with fringe field structure
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10.1063/1.4767996
/content/aip/journal/apl/101/22/10.1063/1.4767996
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/22/10.1063/1.4767996
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Transfer ID-VG characteristics of a-IGZO TFT after NBIS for 2000 s. The inset shows the ID-VG characteristics of a-IGZO TFT after negative gate bias stress without light illumination.

Image of FIG. 2.
FIG. 2.

(a) Transfer ID-VG characteristics of a-IGZO TFTs after NBIS with VD for 2000 s. The inset shows delta VT of ID-VG and reverse ID-VG characteristics during and after NBIS with and without VD. (b) ID-VG characteristics of a-IGZO TFTs with interchanged S/D after NBIS with VD for 2000 s. The inset shows the band diagram along the channel direction before and after NBIS with positive drain bias.

Image of FIG. 3.
FIG. 3.

(a) Transfer ID-VG characteristics of a-IGZO TFTs with 3 μm/side, 8 μm/side, and 16 μm//side FF structures. The inset shows the schematic top view of a fabricated a-IGZO TFT (b) The comparisons of total capacitance for devices with 3 μm/side, 8 μm/side, and 16 μm/side FF structures. The inset shows the illumination spectrum of the halogen lamp.

Image of FIG. 4.
FIG. 4.

(a) ID-VG characteristics of a-IGZO TFTs with 16 μm/side FF structure after NBIS with VD for 2000 s. (b) ID-VG characteristics of16 μm/side-FF-structure a-IGZO TFTs with interchanged S/D after NBIS with VD for 2000 s. (c) The delta VT of ID-VG characteristics of device with width/length 10/10 μm and 3 μm/side, 12 μm/side, and 16 μm/side FF structures during and after NBIS with VD. (d) The delta VT of ID-VG characteristics of device with width/length 40/10 μm and 3 μm/side, 12 μm/side, and 16 μm/side FF structures during and after NBIS with VD.

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/content/aip/journal/apl/101/22/10.1063/1.4767996
2012-11-26
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The suppressed negative bias illumination-induced instability in In-Ga-Zn–O thin film transistors with fringe field structure
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/22/10.1063/1.4767996
10.1063/1.4767996
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