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Compositional dependence of the absorption edge and dark currents in Ge1−xy Si x Sn y /Ge(100) photodetectors grown via ultra-low-temperature epitaxy of Ge4H10, Si4H10, and SnD4
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10.1063/1.4768217
/content/aip/journal/apl/101/22/10.1063/1.4768217
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/22/10.1063/1.4768217
/content/aip/journal/apl/101/22/10.1063/1.4768217
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/content/aip/journal/apl/101/22/10.1063/1.4768217
2012-11-27
2014-12-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Compositional dependence of the absorption edge and dark currents in Ge1−x−ySixSny/Ge(100) photodetectors grown via ultra-low-temperature epitaxy of Ge4H10, Si4H10, and SnD4
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/22/10.1063/1.4768217
10.1063/1.4768217
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