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Sketch of conduction and valence band alignment and the layer structure of the 3.5 μm LED device. The bottom Au contact serves also as heat sink and pseudo substrate.
Spectra of the “SL” (a) and “W” (b) LED devices with 150 μm p ++-GaInAs contact radius are shown. In the case of LEDs 1 and 3, the influence of an anti-reflection-coating is indicated (at 20 °C), whereas in the case of LEDs 2 and 4 the influence of the heat sink temperature is illustrated. The small fringes are due to water vapor absorption.
The photon rate of LEDs 2 and 4 at 20 °C and 80 °C is shown. While the green dashed-dotted line illustrates the expectation after the standard ABC-model, the red lines show fits after the droop model. V/J characteristics of the devices are given in the inset.
The design (“SL” or “W”), well thicknesses, composition, number of QW periods, and wavefunction overlap of the grown LED devices are listed.
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