1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
InP-based 2.8–3.5 μm resonant-cavity light emitting diodes based on type-II transitions in GaInAs/GaAsSb heterostructures
Rent:
Rent this article for
USD
10.1063/1.4768447
/content/aip/journal/apl/101/22/10.1063/1.4768447
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/22/10.1063/1.4768447

Figures

Image of FIG. 1.
FIG. 1.

Sketch of conduction and valence band alignment and the layer structure of the 3.5 μm LED device. The bottom Au contact serves also as heat sink and pseudo substrate.

Image of FIG. 2.
FIG. 2.

Spectra of the “SL” (a) and “W” (b) LED devices with 150 μm p ++-GaInAs contact radius are shown. In the case of LEDs 1 and 3, the influence of an anti-reflection-coating is indicated (at 20 °C), whereas in the case of LEDs 2 and 4 the influence of the heat sink temperature is illustrated. The small fringes are due to water vapor absorption.

Image of FIG. 3.
FIG. 3.

The photon rate of LEDs 2 and 4 at 20 °C and 80 °C is shown. While the green dashed-dotted line illustrates the expectation after the standard ABC-model, the red lines show fits after the droop model. V/J characteristics of the devices are given in the inset.

Tables

Generic image for table
Table I.

The design (“SL” or “W”), well thicknesses, composition, number of QW periods, and wavefunction overlap of the grown LED devices are listed.

Loading

Article metrics loading...

/content/aip/journal/apl/101/22/10.1063/1.4768447
2012-11-26
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: InP-based 2.8–3.5 μm resonant-cavity light emitting diodes based on type-II transitions in GaInAs/GaAsSb heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/22/10.1063/1.4768447
10.1063/1.4768447
SEARCH_EXPAND_ITEM