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Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications
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10.1063/1.4768532
/content/aip/journal/apl/101/22/10.1063/1.4768532
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/22/10.1063/1.4768532
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Figures

Image of FIG. 1.
FIG. 1.

(a) PL spectra of the 0% Bi InGaAs/InP sample at 200 mW laser power at different temperatures. Spectra are normalised to the same peak height (295 K spectrum is ∼28 times weaker than at 30 K). (b) PL spectra of InGaBiAs/InP samples with 1.1% (solid curves) and 2.4% Bi (dashed curves) at various laser powers and temperatures: 1.1% Bi—50 mW (at 30, 60, 90, and 120 K), 200 mW (160, 190, and 220 K), 300 mW (250 and 290 K), 500 mW and 1 W (both at 290 K); 2.4% Bi—200 mW (30 and 90 K) and 2 W (250 K).

Image of FIG. 2.
FIG. 2.

Example PR spectra of (a) the 1.1% and (b) the 2.4% Bi-containing samples at various temperatures in region of Eg. Open circles indicate fitted transition energy of lowest-energy feature (see also Fig. 3). Feature near 0.73 eV at 296 K is due to In0.53Ga0.47As buffer layer.

Image of FIG. 3.
FIG. 3.

PR spectrum (symbols) with fitting curves (solid curves), squared absorption coefficient spectrum (dashed curve with linear fit to determine Eg), and PL spectrum at 295 K for InGaBiAs/InP sample with 1.1% Bi. Arrows indicate bandgap determined by each technique. Inset plots absorption coefficient on logarithmic scale.

Image of FIG. 4.
FIG. 4.

Measured bandgap, Eg, and spin-orbit splitting, ΔSO, from room temperature absorption, PL and PR spectra (symbols). Curves show VBAC calculations for InGaBiAs for different In compositions from 0% to 53%, versus Bi fraction.

Image of FIG. 5.
FIG. 5.

(a) Temperature dependence of PL and PR Eg values for 0, 1.1, and 2.4% Bi. Solid curve is Varshni fit of PL Eg of 0% Bi sample with parameters: α = 0.50 meV/K, β = 327 K, E0 = 0.787 eV. Dashed lines are linear fits of Eg(T) from 150 to 300 K, numbers near each line giving gradients, dEg/dT (meV/K). Lower dashed-dotted curves show extrapolated long wavelength PL peak energies, using same Varshni fit as for 0% Bi bandgap.

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/content/aip/journal/apl/101/22/10.1063/1.4768532
2012-11-26
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/22/10.1063/1.4768532
10.1063/1.4768532
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