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(a) Schematic of DBR fabrication process (b) and (c) cross sectional SEM images of GaN membrane DBRs confirming clear air gaps are formed; (d) DIC image of DBRs after electrochemical etching. The formation of air gaps results in a circular pattern.
Measured and simulated reflectance spectra for ¼λ DBR structure. The measured reflectance shows wide stopband centered at 503 nm with high peak reflectance (≥98%).
Emission spectra of MQWs samples (1) without DBRs, (2) with bottom DBRs, and (3) with bottom DBRs and silver capping layer. Significant linewidth narrowing occurs on samples with DBRs.
FWHM from experiment and from simulated spectra of emitters in a cavity. The agreement between experiments and simulation of high reflectance bottom DBRs indicates membrane DBRs can be used to improve spectral purity via optical cavity modes.
(a) The DIC image of the measurement spots on the EC etched samples with MQWs and (b) the corresponding emission peak and Raman shift.
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