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High reflectance membrane-based distributed Bragg reflectors for GaN photonics
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Schematic of DBR fabrication process (b) and (c) cross sectional SEM images of GaN membrane DBRs confirming clear air gaps are formed; (d) DIC image of DBRs after electrochemical etching. The formation of air gaps results in a circular pattern.

Image of FIG. 2.
FIG. 2.

Measured and simulated reflectance spectra for ¼λ DBR structure. The measured reflectance shows wide stopband centered at 503 nm with high peak reflectance (≥98%).

Image of FIG. 3.
FIG. 3.

Emission spectra of MQWs samples (1) without DBRs, (2) with bottom DBRs, and (3) with bottom DBRs and silver capping layer. Significant linewidth narrowing occurs on samples with DBRs.

Image of FIG. 4.
FIG. 4.

FWHM from experiment and from simulated spectra of emitters in a cavity. The agreement between experiments and simulation of high reflectance bottom DBRs indicates membrane DBRs can be used to improve spectral purity via optical cavity modes.

Image of FIG. 5.
FIG. 5.

(a) The DIC image of the measurement spots on the EC etched samples with MQWs and (b) the corresponding emission peak and Raman shift.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High reflectance membrane-based distributed Bragg reflectors for GaN photonics