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Gate tunable graphene-silicon Ohmic/Schottky contacts
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10.1063/1.4768921
/content/aip/journal/apl/101/22/10.1063/1.4768921
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/22/10.1063/1.4768921
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Optical microscope image of the graphene-on-silicon device before depositing the electrolyte top gate and (b) schematic diagram of the device structure.

Image of FIG. 2.
FIG. 2.

I-V bias characteristics taken at different gate voltages (Vg) of (a) graphene-Si (p-type) and (b) graphene-Si (n-type) devices. The inset figures show the I-V characteristics at Vg  = 0 V.

Image of FIG. 3.
FIG. 3.

Low bias conductance plotted as a function of graphene Fermi energy for (a) graphene-Si (p-type) and (b) graphene-Si (n-type) devices. The right and left solid vertical lines represent the conduction and valence bands of silicon, and the middle dashed line represents the Fermi energy of silicon.

Image of FIG. 4.
FIG. 4.

(a) Graphene-silicon I-V bias characteristics taken under illumination at different gate voltages. (b) Short circuit current (Isc ) with and without illumination plotted as a function of graphene Fermi energy.

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/content/aip/journal/apl/101/22/10.1063/1.4768921
2012-11-29
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Gate tunable graphene-silicon Ohmic/Schottky contacts
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/22/10.1063/1.4768921
10.1063/1.4768921
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