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Low-temperature grown graphene films by using molecular beam epitaxy
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10.1063/1.4768948
/content/aip/journal/apl/101/22/10.1063/1.4768948
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/22/10.1063/1.4768948
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Figures

Image of FIG. 1.
FIG. 1.

(a) The 4.2 × 4.2 nm2 STM images of the graphene film grown at 300 °C measured under tunneling current 1.05 nA and bias 1.6 V showing complete hexagonal structure of C atoms and the Raman spectra of (b) the Cu substrate after high-temperature annealing and (c) the film transferred to a 600 nm SiO2/p-type Si substrate.

Image of FIG. 2.
FIG. 2.

(a) The SEM image of the graphene transistor and (b) the drain currents measured under different gate biases of the graphene back-gate transistor showing significant current modulation under drain voltage of 1 V.

Image of FIG. 3.
FIG. 3.

The STM image of the graphene flake grown at room temperature.

Image of FIG. 4.
FIG. 4.

Snapshots of MBE graphene growth from molecular dynamics simulation: (a) 573 K, 12 ns; (b) 573 K, 16 ns; (c) 300 K, 12 ns.

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/content/aip/journal/apl/101/22/10.1063/1.4768948
2012-11-27
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low-temperature grown graphene films by using molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/22/10.1063/1.4768948
10.1063/1.4768948
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