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(a) The 4.2 × 4.2 nm2 STM images of the graphene film grown at 300 °C measured under tunneling current 1.05 nA and bias 1.6 V showing complete hexagonal structure of C atoms and the Raman spectra of (b) the Cu substrate after high-temperature annealing and (c) the film transferred to a 600 nm SiO2/p-type Si substrate.
(a) The SEM image of the graphene transistor and (b) the drain currents measured under different gate biases of the graphene back-gate transistor showing significant current modulation under drain voltage of 1 V.
The STM image of the graphene flake grown at room temperature.
Snapshots of MBE graphene growth from molecular dynamics simulation: (a) 573 K, 12 ns; (b) 573 K, 16 ns; (c) 300 K, 12 ns.
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