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IV characteristics of an 110 nm AlN film deposited on an untreated silicon substrate (sample UT) up to T = 573 K in air.
IV characteristics of an 110 nm AlN film deposited on a sputter-etched silicon substrate (sample SE) up to T = 573 K in air. The higher noise levels are caused by reaching the resolution limit of the measurement set-up.
Arrhenius plot for both samples measured at highest applied negative field of E = −0.45 MV/cm demonstrating excellent linearity especially at T > 383 K.
Activation energy Ea as determined from the IV measurements in Arrhenius configuration. The inserted curves represent the best fit to the measured data resulting in the corresponding barrier heights.
HRTEM micrograph of the interface region between silicon substrate and AlN thin film (sample UT). The inset shows the electron diffraction pattern of the AlN film.
HRTEM micrograph of the interface between the pre-sputtered silicon substrate and the AlN thin film (sample SE). The electron diffraction pattern (inset) shows crystallographically well-oriented grains compared to Fig. 5 .
XRD characteristics of AlN thin films deposited on untreated and pre-sputtered silicon substrates.
Parameters in the sputter chamber prior and during AlN thin film synthetization.
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