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Impact of the surface-near silicon substrate properties on the microstructure of sputter-deposited AlN thin films
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10.1063/1.4768951
/content/aip/journal/apl/101/22/10.1063/1.4768951
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/22/10.1063/1.4768951

Figures

Image of FIG. 1.
FIG. 1.

IV characteristics of an 110 nm AlN film deposited on an untreated silicon substrate (sample UT) up to T = 573 K in air.

Image of FIG. 2.
FIG. 2.

IV characteristics of an 110 nm AlN film deposited on a sputter-etched silicon substrate (sample SE) up to T = 573 K in air. The higher noise levels are caused by reaching the resolution limit of the measurement set-up.

Image of FIG. 3.
FIG. 3.

Arrhenius plot for both samples measured at highest applied negative field of E = −0.45 MV/cm demonstrating excellent linearity especially at T > 383 K.

Image of FIG. 4.
FIG. 4.

Activation energy Ea as determined from the IV measurements in Arrhenius configuration. The inserted curves represent the best fit to the measured data resulting in the corresponding barrier heights.

Image of FIG. 5.
FIG. 5.

HRTEM micrograph of the interface region between silicon substrate and AlN thin film (sample UT). The inset shows the electron diffraction pattern of the AlN film.

Image of FIG. 6.
FIG. 6.

HRTEM micrograph of the interface between the pre-sputtered silicon substrate and the AlN thin film (sample SE). The electron diffraction pattern (inset) shows crystallographically well-oriented grains compared to Fig. 5 .

Image of FIG. 7.
FIG. 7.

XRD characteristics of AlN thin films deposited on untreated and pre-sputtered silicon substrates.

Tables

Generic image for table
Table I.

Parameters in the sputter chamber prior and during AlN thin film synthetization.

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/content/aip/journal/apl/101/22/10.1063/1.4768951
2012-11-27
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of the surface-near silicon substrate properties on the microstructure of sputter-deposited AlN thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/22/10.1063/1.4768951
10.1063/1.4768951
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