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Universal scaling of resistivity in bilayer graphene
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10.1063/1.4769042
/content/aip/journal/apl/101/22/10.1063/1.4769042
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/22/10.1063/1.4769042
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Raman spectrum of bilayer graphene. (b) 2D peak with the theoretical fit.

Image of FIG. 2.
FIG. 2.

(a) Optical micrograph of the patterned top gated graphene device. “S” stands for source, “G” for top gate, and “D” for drain. (b) Resistance with respect to that at 5 K (Rxx /R 5K) versus top gate voltage (VG ) at different temperatures from 5 to 220 K. (c) Optical micrograph of the patterned Hall bar graphene device with a back gate. (d) Four probe resistivity (ρ) versus back gate voltage (VB G ) at different temperatures from 60 to 220 K.

Image of FIG. 3.
FIG. 3.

(a) Resistance (Rxx/R 5K) versus temperature (T) as a function of top gate voltage (VG ) with the fits. (b) Four probe resistivity (ρ) versus temperature (T) as a function of back gate voltage (VB G ) with the fits. (c) Normalized resistance versus normalized temperature at different VG showing the universal nature of the scattering in bilayer graphene. (d) Normalized resistance versus normalized temperature at different VB G .

Image of FIG. 4.
FIG. 4.

(a) Calculated scaling parameter (T s) versus top gate voltage (VG ). (b) Normalized residual resistivity (R 0 /Rmax ) versus VG . (c) Normalized saturated resistivity (Re/Rmax ) versus VG . (d) Calculated conductance (G 0) versus VG .

Image of FIG. 5.
FIG. 5.

(a) G(T)/G 5K versus temperature (T) with theoretical fits using Eqs. (2)–(4). (b) Logarithmic dependence of G(T)/G 5K as a function of 1000/T at VG  = 0.5 V. The absence of a single slope rules out a simple semiconducting behavior. The inset shows the logarithmic dependence of G(T)/G 5K as a function of T (−1/3). The absence of a single slope rules out VRH mechanism.

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/content/aip/journal/apl/101/22/10.1063/1.4769042
2012-11-27
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Universal scaling of resistivity in bilayer graphene
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/22/10.1063/1.4769042
10.1063/1.4769042
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