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(a) RHEED oscillations obtained during the growth of the NdAlO3/SrTiO3 (100) samples (b) AFM image of the NdAlO3/SrTiO3 sample showing the step flow surface indicating the layer by layer growth of the NdAlO3 films.
Temperature dependence of (a) sheet resistance, R s, (b) charge carrier density, ns , and mobility, μ, for NdAlO3/SrTiO3 samples with different thicknesses.
The ln(R s) vs. (1/T)1/3 graph for 12 and 16 uc NdAlO3/SrTiO3 samples, a 2D VRH fit.
(a) Out-of-plane MR measured at different temperatures for 12 uc NdAlO3/SrTiO3 sample. Inset: scaling of MR at 9 T with temperature for negative MR part. (b) MR (Out of plane) measured at 2 K with magnetic field showing linear variation at high magnetic fields. Inset: B2 dependence for low magnetic fields. (c) In-plane MR measured at different temperatures. (d) Angle dependence of R s at 2 K and 9 T.
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