This study presents the green InGaN/GaN multiple quantum wellslight-emitting diodes(LEDs) grown on a GaNnanorods template with SiO2 nanomasks by metal–organic chemical vapor deposition. By nanoscale epitaxial lateral overgrowth, microscale air voids were formed between nanorods and the threading dislocations were efficiently suppressed. The electroluminescence measurement reveals that the LEDs on nanorods template with SiO2 nanomasks suffer less quantum-confined Stark effect and exhibit higher light output power and lower efficiency droop at a high injection current as compared with conventional LEDs.
11.C. H. Chiu, P. M. Tu, C. C. Lin, D. W. Lin, Z. Y. Li, K. L. Chuang, J. R. Chang, T. C. Lu, H. W. Zan, C. Y. Chen, H. C. Kuo, S. C. Wang, and C. Y. Chang, IEEE J. Sel. Top. Quantum Electron.17, 971 (2010).