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Microwave frequency comb attributed to the formation of dipoles at the surface of a semiconductor by a mode-locked ultrafast laser
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10.1063/1.4768952
/content/aip/journal/apl/101/23/10.1063/1.4768952
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/23/10.1063/1.4768952
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Normalized power in the surge current and the radiated power for each harmonic with τ = 570 fs and a pulse repetition rate fR = 74.25 MHz.

Image of FIG. 2.
FIG. 2.

Power measured at the fundamental, 10th and 20th harmonics in the frequency comb generated using a silicon sample in air, in (solid) and out (dashed) of the tunneling regime.

Image of FIG. 3.
FIG. 3.

Power measured at successive harmonics for (a) Si(111) in air with a DC tunneling current of 100 pA, and (b) GaAs in air and out of the tunneling regime.

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/content/aip/journal/apl/101/23/10.1063/1.4768952
2012-12-03
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Microwave frequency comb attributed to the formation of dipoles at the surface of a semiconductor by a mode-locked ultrafast laser
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/23/10.1063/1.4768952
10.1063/1.4768952
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