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Ultra-thin planar fully relaxed Ge pseudo-substrate on compliant porous silicon template layer
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10.1063/1.4769040
/content/aip/journal/apl/101/23/10.1063/1.4769040
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/23/10.1063/1.4769040

Figures

Image of FIG. 1.
FIG. 1.

(a) and (b) TEM cross-section images of: (a) as grown PSi on large scale evidencing the columnar morphology and (b) after high temperature annealing; (c) omega-2theta (004) scans of the as grown (curve A: dot line) and annealed (curve B: continuous line) PSi layer; (d) (224) reciprocal space mapping of as grown PSi.

Image of FIG. 2.
FIG. 2.

(a) Evolution of the omega-2theta (004) scans as a function of the Ge deposited thickness (h) for h = 0; h = 40 nm, and h = 150 nm; in the insert is presented a typical (224) reciprocal space mapping of Ge/PSi structures (here h = 80 nm; TG = 400 °C); (b) and (c) TEM cross-section images of the Ge/PSi/Si(001) substrate structure for (b) h = 40 nm and (c) h = 150 nm.

Image of FIG. 3.
FIG. 3.

(a) and (b) Evolution of the omega-2theta (004) scans of the Ge/PSi/Si(001) structure elaborated at TG = 400 °C and TG = 500 °C for h = 80 nm and (b) at TG = 400 °C and TG = 700 °C for h = 40 nm; (c) TEM cross-section images of the Ge/PSi/Si(001) structure elaborated at TG = 700 °C for h = 40 nm and (d) zoom of the surface.

Tables

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Table I.

Ge content and relaxation of the different Ge/PSi structures investigated. In columns 2 and 3 are given the elaboration conditions: growth temperature (TG) and deposited thickness (h).

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/content/aip/journal/apl/101/23/10.1063/1.4769040
2012-12-03
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultra-thin planar fully relaxed Ge pseudo-substrate on compliant porous silicon template layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/23/10.1063/1.4769040
10.1063/1.4769040
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