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Electron-state engineering of bilayer graphene by ionic molecules
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Based on the first-principles total-energy calculations, we demonstrate the possibility of controlling the band-gap and carrier type of bilayer graphene using ionic molecules. Our calculations suggest that bilayer graphene sandwiched by a pair of cation-anion molecules is a semiconductor with a moderate energy gap of 0.26 eV that is attributable to the strong local dipole field induced by the cation-anion pair. Furthermore, we can control the semiconducting carrier type—intrinsic, p-type, or n-type—of bilayer graphene sandwiched by ionic molecules by changing the cation-anion pair.
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