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Electron-state engineering of bilayer graphene by ionic molecules
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/content/aip/journal/apl/101/23/10.1063/1.4769098
2012-12-04
2014-08-31

Abstract

Based on the first-principles total-energy calculations, we demonstrate the possibility of controlling the band-gap and carrier type of bilayer graphene using ionic molecules. Our calculations suggest that bilayer graphene sandwiched by a pair of cation-anion molecules is a semiconductor with a moderate energy gap of 0.26 eV that is attributable to the strong local dipole field induced by the cation-anion pair. Furthermore, we can control the semiconducting carrier type—intrinsic, p-type, or n-type—of bilayer graphene sandwiched by ionic molecules by changing the cation-anion pair.

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Scitation: Electron-state engineering of bilayer graphene by ionic molecules
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/23/10.1063/1.4769098
10.1063/1.4769098
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