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Piezoresistance behaviors of ultra-strained SiC nanowires
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10.1063/1.4769217
/content/aip/journal/apl/101/23/10.1063/1.4769217
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/23/10.1063/1.4769217
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Specimen operation process. (a)–(d) are schematic diagrams of the operation processes. (a) Selecting and approaching an individual SiC NW. (b) Contacting and welding this NW. (c) Pulling the individual NW out. (d) Moving to an appropriate position, welding and fixing.

Image of FIG. 2.
FIG. 2.

Images of the tensile SiC NWs and the corresponding I-V curves. (a)–(f) images of the tensile SiC NW, (g)–(h) images of the fractured NW. (i) the corresponding I-V curves.

Image of FIG. 3.
FIG. 3.

The current improvement rate versus the strain.

Image of FIG. 4.
FIG. 4.

Current responses under the applied stress with the time. Two stress-induced steps were performed by increasing the stress by controlling the movement of one electrode (W tip) that was fixed to the SiC NW with another electrode (Ag).

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/content/aip/journal/apl/101/23/10.1063/1.4769217
2012-12-05
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Piezoresistance behaviors of ultra-strained SiC nanowires
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/23/10.1063/1.4769217
10.1063/1.4769217
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