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O 1s and Si 2p spectra showing the growth of MnSiO3 as a function of thermal anneal.
Mn 2p spectra showing the growth of a component peak referred to as “oxidized Mn” as a function of thermal anneal. The Mn 2p “Mn deposition” spectrum is also overlayed on the 500 °C spectrum for comparison. Ru 3d spectra (290 eV–275 eV) show no change during the experiment.
High resolution TEM image of the interfacial Ru layer displaying its polycrystalline structure.
(a) STEM-HAADF micrograph of the Mn-Ru/SiO2 layers. (b) Mn composition profile obtained from the EELS line profile indicated by the dashed line in (a), showing the presence of Mn at the Ru/SiO2 interface, and at the Ru surface. There is a much reduced Mn signal intensity in the Ru film itself suggesting that the Mn migrated through the film where it interacted with the SiO2 substrate.
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