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Electrically active Er doping in InAs, In0.53Ga0.47As, and GaAs
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10.1063/1.4769248
/content/aip/journal/apl/101/23/10.1063/1.4769248
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/23/10.1063/1.4769248
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Carrier concentration and (b) activation efficiency (active carrier concentration/Er atom concentration) of Er-doped GaAs, In0.53Ga0.47As, and InAs at 300 K. Note: Data from GaAs samples alloyed with 0.2% and 0.4% Er are not shown because these samples were too resistive to be measured.

Image of FIG. 2.
FIG. 2.

Formation energies, Ef, of atomic impurities in (a) GaAs and (b) InAs versus Fermi level, εF. For the substitutional impurity, the formation energy is independent of Ga and As chemical potentials. Note the different scales in (a) and (b).

Image of FIG. 3.
FIG. 3.

Possible interstitial configurations for Er in GaAs and InAs. In T1, Er has four As nearest neighbors; in T2, Er has four Ga or In nearest neighbors.

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/content/aip/journal/apl/101/23/10.1063/1.4769248
2012-12-04
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrically active Er doping in InAs, In0.53Ga0.47As, and GaAs
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/23/10.1063/1.4769248
10.1063/1.4769248
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