The application of a cryogenic thermal excursion to passivated copperfilms has been demonstrated to dramatically reduce the magnitude of residual stress and to induce compressive, in-plane stress at room temperature. In-situx-ray diffraction measurements reveal the evolution of in-plane stress within SiCxNyHz and TaN capped Cufilms, which undergo significant plastic behavior on cooling and as the film approaches room temperature during heating. The resulting compressive stress represents a more favorable condition to mitigate voiding within the metallization.In-situ and ex-situ measurements of SiCxNyHz capped Cufilms reveal that the final stress state is independent of cooling rate.
Received 21 September 2012Accepted 15 November 2012Published online 05 December 2012
This work was performed by the Research Alliance Teams at various IBM Research and Development facilities. The authors gratefully acknowledge Dr. Valery Borzenets for assistance with the diffraction measurements, which were carried out at the Stanford Synchrotron Radiation Lightsource, which was supported by the U.S. Department of Energy, Division of Materials Sciences and Division of Chemical Sciences. Use of the National Synchrotron Light Source, Brookhaven National Laboratory, was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-98CH10886.
Manufacture or treatment of devices consisting of a plurality of soli...
Conal E. Murray,
E. Todd Ryan and
Michael F. Toney
Source:Appl. Phys. Lett. 101, 231906 (
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