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Mitigating residual stress in Cu metallization
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10.1063/1.4769366
/content/aip/journal/apl/101/23/10.1063/1.4769366
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/23/10.1063/1.4769366
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional TEM image of the initial TaN-capped Cu film geometry.

Image of FIG. 2.
FIG. 2.

Evolution of in-plane stress measured in the TaN-capped Cu film during cooling and heating.

Image of FIG. 3.
FIG. 3.

CTE values of Cu and Si and their difference as a function of temperature (data tabulated from Refs. 13 and 14).

Image of FIG. 4.
FIG. 4.

Comparison of in-plane stress values of the SiCxNyHz-capped Cu film measured before and after LN2 immersion and in-situ during cryogenic cooling.

Image of FIG. 5.
FIG. 5.

Fitted Cu (422) peak widths averaged over all ψ-tilts for the TaN-capped Cu film as a function of temperature.

Image of FIG. 6.
FIG. 6.

Cross-sectional TEM image of the TaN-capped Cu film geometry after the cryogenic thermal excursion.

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/content/aip/journal/apl/101/23/10.1063/1.4769366
2012-12-05
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mitigating residual stress in Cu metallization
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/23/10.1063/1.4769366
10.1063/1.4769366
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