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Determination of the deep donor-like interface state density distribution in metal//n-GaN structures from the photocapacitance–light intensity measurement
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10.1063/1.4769815
/content/aip/journal/apl/101/23/10.1063/1.4769815
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/23/10.1063/1.4769815
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Measured photocapacitance transients of metal/ structure after switch on and off the UV light at room temperature.

Image of FIG. 2.
FIG. 2.

The schematic presentation of the electronic phenomena analyzed in illuminated and negatively biased MIS structure, (1) electron-hole generation, (2) band to band recombination, (3) radiative point defect transitions, (4) non-radiative SRH recombination, is the surface potential.

Image of FIG. 3.
FIG. 3.

Calculated in-depth profiles of hole concentration p(x) in GaN, where x is the distance from the surface, for different interface state density and bulk lifetime: and (curve 1), and (2), and and (3). Inset: interface recombination rate per one incident photon for different interface state cross section for electron capturing (curve 1) and (2) . W is the depletion layer width.

Image of FIG. 4.
FIG. 4.

Calculated capacitance-voltage characteristics for the ideal MIS structure (without interface states) and for various interface state density distributions as shown in the inset.

Image of FIG. 5.
FIG. 5.

Calculated photocapacitance-light intensity curves (1–3) for various interface state density distributions as shown in the inset. Curve 4 corresponds to and shape of curve 1. Ideal curve is for . Curve 5 represents position with respect of the valence band top at the surface () vs. for of curve 2. The points represent the experimental data.

Image of FIG. 6.
FIG. 6.

The interface state density distribution determined by using the presented method (solid lines) and the part derived from Terman technique (points). The dashed line means the approximated parts of with exponential function. Inset: relationship between and position at the interface.

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/content/aip/journal/apl/101/23/10.1063/1.4769815
2012-12-06
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Determination of the deep donor-like interface state density distribution in metal/Al2O3/n-GaN structures from the photocapacitance–light intensity measurement
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/23/10.1063/1.4769815
10.1063/1.4769815
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