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(a) The cross-sectional view of the device. (b) The typical I-V characteristic of the devices.
(a) The cross-sectional TEM images of the sample. (b) The experimental and simulated XRD curves of the sample along the (004) direction.
(a) Room temperature EL spectra of device under various injection currents. The PL spectra of sample is shown to compare. (b) The current dependent integrated EL intensity of device.
(a) Band edge diagrams of sample. E c,Γ and E c,L are the conduction band minima at Γ point and L point, respectively. LH and HH are the valence band maxima of the light hole and the heavy hole, respectively. E Γ0 and E HH0 are the ground states of electrons and heavy holes at Γ point, respectively. (b) The spontaneous emission result for the undoped and 4 × 1018 cm−3 n-doped QWs with the input of carrier concentration of 2 × 1018 cm−3.
The spectral responsivity of the device under reverse bias.
(a) The EL spectra of device with the constant current density of 1 kA/cm2 at 25 °C–45 °C. (b) The temperature dependent EL peak position of device at 25 °C–45 °C.
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