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Charge and hole densities as a function of electric field which is applied to gate insulator.
XRD results of the Ta2O5 thin films deposited on Ib HPHT (001) single crystal diamond substrate before and after annealing.
TEM images of Ta2O5 thin film on Ib HPHT (001) single crystal diamond substrate.
(a) The schematic WC/Ta2O5/diamond diode structure. (b) Current-voltage characteristics of the MIS structures for the as deposited amorphous and RTA processed crystallized thin films, compared with that of the WC/diamond Schottky diode. The electrical transport mechanisms at forward bias were also illustrated.
Capacitance–voltage characteristics of the WC/Ta2O5/p-diamond structure before (a) and after (b) the RTA process.
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