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Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices
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10.1063/1.4770059
/content/aip/journal/apl/101/23/10.1063/1.4770059
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/23/10.1063/1.4770059
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Charge and hole densities as a function of electric field which is applied to gate insulator.

Image of FIG. 2.
FIG. 2.

XRD results of the Ta2O5 thin films deposited on Ib HPHT (001) single crystal diamond substrate before and after annealing.

Image of FIG. 3.
FIG. 3.

TEM images of Ta2O5 thin film on Ib HPHT (001) single crystal diamond substrate.

Image of FIG. 4.
FIG. 4.

(a) The schematic WC/Ta2O5/diamond diode structure. (b) Current-voltage characteristics of the MIS structures for the as deposited amorphous and RTA processed crystallized thin films, compared with that of the WC/diamond Schottky diode. The electrical transport mechanisms at forward bias were also illustrated.

Image of FIG. 5.
FIG. 5.

Capacitance–voltage characteristics of the WC/Ta2O5/p-diamond structure before (a) and after (b) the RTA process.

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/content/aip/journal/apl/101/23/10.1063/1.4770059
2012-12-07
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/23/10.1063/1.4770059
10.1063/1.4770059
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