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Large-area GaN n-core/p-shell arrays fabricated using top-down etching and selective epitaxial overgrowth
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10.1063/1.4769376
/content/aip/journal/apl/101/24/10.1063/1.4769376
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/24/10.1063/1.4769376
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Figures

Image of FIG. 1.
FIG. 1.

Schematic representation of the fabrication process of GaN core-shell structure: (a) as-grown layer structure, (b) pillar formation by ICP etching, and (c) after p-GaN shell overgrowth.

Image of FIG. 2.
FIG. 2.

SEM images of (a) array of as-etched GaN pillars with 0.5 μm diameter and 2.5 μm pitch; (b) circle-, square-, and diamond-shaped pillars before and after p-shell growth (plan-view); (c) and (d) p-shells grown for 10 min at 1020 °C and HCl/NH3 flow rates of 6/200 (sccm) on (c) 0.5 μm and (d) 0.2 μm pillars; (e) p-shells grown for 5 min at 1040 °C and HCl/NH3 flow rates of 20/1500 (sccm) on square pillars with 10 μm width and 20 μm pitch. Tilted SEM images were taken at 70°. The scale bars are 2 μm for (a)–(d) and 20 μm for (e).

Image of FIG. 3.
FIG. 3.

Dark-field cross-sectional TEM images of two different core-shell structures with original square core with diameter 0.5 μm in (a) and (b). The cross-sections were prepared using FIB instrument. The arrow in (a) points to the bending of a dislocation as it crosses into the shell. Dashed lines in (b) outline the shape of the initial GaN core. The scale bar is 0.2 μm in both the images.

Image of FIG. 4.
FIG. 4.

Room-temperature PL spectra of bulk GaN (black), unetched thin film (red), etched pillars (green), after p-shell growth (blue), and after the activation anneal (magenta). The dashed line indicates the peak position of room-temperature NBE of strain-free GaN. The etched sample showed significant reduction in the intensity. The PL intensity of activated p-shell increased by a factor of 10, when compared to the as-grown shell.

Image of FIG. 5.
FIG. 5.

Room-temperature Raman scattering spectra from bulk GaN (black), unetched thin film (red), etched pillars (green), after p-shell growth (blue), and after the Mg activation anneal (magenta). The position of E2 H is given in parenthesis.

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/content/aip/journal/apl/101/24/10.1063/1.4769376
2012-12-14
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Large-area GaN n-core/p-shell arrays fabricated using top-down etching and selective epitaxial overgrowth
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/24/10.1063/1.4769376
10.1063/1.4769376
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