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Scanning tunneling microscopy with InAs nanowire tips
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Piece of GaAs wafer glued on the support block and mounted inside the protective frame before transferring the polymethylmethacrylate (PMMA) sheet. (b) Optical microscope image of the GaAs support inside the protective frame after transferring the PMMA. This covers the frame, the whole GaAs area, and the gap in between including the InAs nanowire. The GaAs appears homogeneously blue which, since caused by interference, indicates that the PMMA film is uniform. The position of the invisible InAs nanowire (NW) is marked.

Image of FIG. 2.
FIG. 2.

(a) GaAs support with contacted InAs tip mounted on the STM tip holder. (b) SEM image (-tilted view) of the STM tip before approaching a Au(111) sample. The small overhang of the GaAs support corner provides a tolerance of about in angular adjustment accuracy of the nanowire with respect to the probed surface, still guaranteeing a protruding nanowire during the tip approach. (c) SEM image (top view) of the same nanowire after use as a STM tip on a Au(111) surface.

Image of FIG. 3.
FIG. 3.

(a) STM topography of Au(111) (sample bias: U = +1 V, I = 50 pA). Inset: STM images exhibiting atomic resolution (U = +1 V, I = 10 pA) with red dots marking the atoms. The scale bar is 5 Å. (b) Line scan along the blue line in (a). Full red curve: forward scan, dashed black curve: backward scan. The relative shift of the step edge is 0.6 nm. Inset: zoom into the range from 5 nm to 8 nm.

Image of FIG. 4.
FIG. 4.

(a) I(z) curve averaged over 5 spectra recorded with the InAs tip (black squares) at different positions of the Au(111); stabilization at U = 1 V, I = 100 pA; an exponential fit with (red line) is shown for comparison. (b) dI/dU(U) curve averaged from 10 spectra; stabilization at I = 100 pA, U = 1 V.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Scanning tunneling microscopy with InAs nanowire tips