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Temperature-dependent capacitance-voltage analysis of defects in Al2O3 gate dielectric stacks on GaN
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10.1063/1.4769827
/content/aip/journal/apl/101/24/10.1063/1.4769827
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/24/10.1063/1.4769827
/content/aip/journal/apl/101/24/10.1063/1.4769827
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/content/aip/journal/apl/101/24/10.1063/1.4769827
2012-12-12
2014-12-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature-dependent capacitance-voltage analysis of defects in Al2O3 gate dielectric stacks on GaN
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/24/10.1063/1.4769827
10.1063/1.4769827
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