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Preferred armchair edges of epitaxial graphene on 6H-SiC(0001) by thermal decomposition
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) 5 nm × 5 nm STM image of graphene at a tunneling current of I = 400 pA and bias voltage of Vs = 3 mV. (b) Corresponding 2D-FFT of panel (a). (c) and (d) Schematic model of graphene in real lattice (c) in reciprocal space (d). The zigzag and armchair orientations are marked by red and yellow double headed arrows, respectively; they have an angle of 30°.

Image of FIG. 2.
FIG. 2.

(a) 60 nm × 60 nm STM topography of graphene monolayer combined with buffer layer [I = 100 pA, Vs = −3 V]. (b) The height profile along the green solid line. (c) Schematic relationship of any two armchair orientations. (d) and (e) are the enlarged images of the green and black boxes in panel (a). Green rhombuses indicate the unit cell of QI pattern. (f) and (g) are the corresponding 2D-FFT.

Image of FIG. 3.
FIG. 3.

(a), (b) and (c), (d) Two typical macroscopic edges of epitaxial graphene on SiC as well as the height profiles along the green solid lines. All the angles between edges are about 120°. (e) The distribution of edge including angles. Tunneling conditions: (a) Vs = −2.7 V, I = 130 pA and (c) Vs = −2.0 V, I = 100 pA.

Image of FIG. 4.
FIG. 4.

(a) 40 nm × 40 nm STM topography of the area mixed with single and bilayer graphene. The inset in panel (a) shows the 3D morphology. (b) The height profile along the green solid line in panel (a). (c), (d), and (e) are the atomically images of the area marked by colorful boxes in panel (a).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Preferred armchair edges of epitaxial graphene on 6H-SiC(0001) by thermal decomposition