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(a) A cross-sectional TEM image of a stacked Al/a-IGZO/Al structure in In:Ga:Zn= 1:2:1. (b) Typical current density-voltage (J-V) curve of RRAM consisting of an Al/a-IGZO/Al device with In:Ga:Zn = 1:2:1 during a bipolar voltage sweep. Arrows indicate the direction of the voltage sweep. The inset represents XRD data for the deposited IGZO annealed at 370 °C.
The oxygen-concentration profile based on an EELS analysis with respect to the depth for (a) In:Ga:Zn = 1:0:1 and (b) In:Ga:Zn = 1:2:1.
Measured current density-voltage (J-V) characteristics of devices in a double-logarithmic plot in (a) In:Ga:Zn = 1:0:1 and (b) In:Ga:Zn= 1:2:1. Arrows indicate the direction of the voltage sweep. The J-V curves positioned toward the right in (a) and (b) indicate the electro-forming process from fresh devices. After the electro-forming process is performed, the J-V curves positioned toward the left in (a) and (b) represent a permanent breakdown and a LRS, respectively. The CC is set to 10 A/cm2 in (a), and the value of the current is not limited in (b).
A graph to show the modulation effects of BRS by controlling the CC with various Ga concentrations. Here, a breakdown means a permanent breakdown. BRS with poor endurance indicates that the devices show BRS with unstable endurance characteristics. No RS indicates that a hysteretic J-V curve is not observed.
Endurance characteristics during switching cycling after the electro-forming process for (a) In:Ga:Zn = 1:0.5:1 and (b) In:Ga:Zn = 1:2:1. The CC is set at 10 A/cm2.
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