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Effects of the oxygen vacancy concentration in InGaZnO-based resistance random access memory
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10.1063/1.4770073
/content/aip/journal/apl/101/24/10.1063/1.4770073
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/24/10.1063/1.4770073
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) A cross-sectional TEM image of a stacked Al/a-IGZO/Al structure in In:Ga:Zn= 1:2:1. (b) Typical current density-voltage (J-V) curve of RRAM consisting of an Al/a-IGZO/Al device with In:Ga:Zn = 1:2:1 during a bipolar voltage sweep. Arrows indicate the direction of the voltage sweep. The inset represents XRD data for the deposited IGZO annealed at 370  °C.

Image of FIG. 2.
FIG. 2.

The oxygen-concentration profile based on an EELS analysis with respect to the depth for (a) In:Ga:Zn = 1:0:1 and (b) In:Ga:Zn = 1:2:1.

Image of FIG. 3.
FIG. 3.

Measured current density-voltage (J-V) characteristics of devices in a double-logarithmic plot in (a) In:Ga:Zn = 1:0:1 and (b) In:Ga:Zn= 1:2:1. Arrows indicate the direction of the voltage sweep. The J-V curves positioned toward the right in (a) and (b) indicate the electro-forming process from fresh devices. After the electro-forming process is performed, the J-V curves positioned toward the left in (a) and (b) represent a permanent breakdown and a LRS, respectively. The CC is set to 10 A/cm2 in (a), and the value of the current is not limited in (b).

Image of FIG. 4.
FIG. 4.

A graph to show the modulation effects of BRS by controlling the CC with various Ga concentrations. Here, a breakdown means a permanent breakdown. BRS with poor endurance indicates that the devices show BRS with unstable endurance characteristics. No RS indicates that a hysteretic J-V curve is not observed.

Image of FIG. 5.
FIG. 5.

Endurance characteristics during switching cycling after the electro-forming process for (a) In:Ga:Zn = 1:0.5:1 and (b) In:Ga:Zn = 1:2:1. The CC is set at 10 A/cm2.

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/content/aip/journal/apl/101/24/10.1063/1.4770073
2012-12-10
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of the oxygen vacancy concentration in InGaZnO-based resistance random access memory
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/24/10.1063/1.4770073
10.1063/1.4770073
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