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Composition dependent metal-semiconductor transition in transparent and conductive La-doped BaSnO3 epitaxial films
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10.1063/1.4770299
/content/aip/journal/apl/101/24/10.1063/1.4770299
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/24/10.1063/1.4770299
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) XRD specular linear scans from LBSO/MgO heterostructures at different La contents (from x = 0 to 0.20). (b) The Ф scans pattern of the LBSO films and MgO substrate around (202) reflections. (c) Out-of-plane lattice parameters of LBSO films grown on MgO(001) substrates as a function of La doping content x, the error bars represent the standard deviation calculated based on XRD (00 l) peaks position.

Image of FIG. 2.
FIG. 2.

AFM images of LBSO films grown on MgO(001) substrates with La content at (a) x = 0, (b) x = 0.02, (c) x = 0.05, (d) x = 0.07, (e) x = 0.10, (f) x = 0.15, and (g) x = 0.20.

Image of FIG. 3.
FIG. 3.

Temperature-dependent resistivity from the LBSO films with La content at (a) x = 0.02, (b) x = 0.05, (c) x = 0.07, (d) x = 0.10, (e) x = 0.15, and (f) x = 0.20. The right to figures (a)-(e) shows the linear fit of ρ vs lnT, and the right to figure (f) is the linear fit of lnρ vs T −1/4.

Image of FIG. 4.
FIG. 4.

(a) Optical transmission of pure MgO substrate and the LBSO/MgO heterostructures at different La contents. (b) (hvα)2 versus hv plots of LBSO/MgO(001) films (x = 0-0.20), and the inset shows the band gaps of LBSO films, the error bars originate in the uncertainty in the extrapolation of the absorption curves down to the base line.

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/content/aip/journal/apl/101/24/10.1063/1.4770299
2012-12-10
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Composition dependent metal-semiconductor transition in transparent and conductive La-doped BaSnO3 epitaxial films
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/24/10.1063/1.4770299
10.1063/1.4770299
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