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Calculated RE as a function of carrier concentration n for different values of (a) the A SRH and C Auger coefficient and (b) the B coefficient; (c) the even-symmetry property of the RE-versus-n curve based on the ABC model. Any two carrier concentrations with the same “distance” from nRE-peak are associated with the same radiative efficiency, i.e., α REpeak.
Calculated relation between REpeak and full-width of RE-versus-n curve at α = 50% (FWHM), 70%, and 90%.
The EQEnormalized-versus- of the n-GaN/SQW/n-GaN and n-GaN/SQW/p-GaN samples and IQEpeak calculated from the half-width at T = 300 K (c is a constant that indicates an abscissa shift).
(a) Relative-efficiency-versus-excitation-laser-power at 4 K and 300 K for the n-type-GaN/SQW/n-type-GaN sample; the efficiency is normalized to the peak efficiency at 4 K. By assuming 100% efficiency at 4 K, one obtains a REpeak of 91% at 300 K. (b) EQEnormalized-versus- obtained from the data shown in (a). The half-width can be measured and used to determine REpeak. (c) REpeak determined from the half-width shown in (b). At T = 4 K, the sample shows a REpeak of 99% while at T = 300 K it shows a REpeak of 91%, in agreement with the temperature-dependent PL results.
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