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(a) A schematic illustration of a white LED consisting of a nitride-based near-UV LED chip, a SiC layer for wavelength converting and a monolayer spheres array. (b) An oblique-view SEM figure of the SiC sample with a monolayer array of spheres. Scale bar: 2 μm. (c) Measured reflectance spectra of the bare SiC sample (the dashed line) and the one with the spheres array (the solid line), as well as the simulated reflectance (the dotted line).
(a) Electric field distribution of the component based on full-wave simulations of electromagnetic waves. Resonance wavelengths are 745, 625, and 463 nm, as well as the off-resonance one at 540 nm, respectively. (b) and (c) component of electric field in the (x, y)-plane of the cross section inside the bulk SiC layer. The left pattern in (c) is for and the right one is for , which correspond to the second-order WG mode and the off-resonance frequency, respectively. (d) A schematic illustration of the optical modes confined inside the LED structures and the coupled light-extraction modes are also shown. Fresnel transmission factors for the samples with and without the spheres under (e) s- and (f) p-polarized incidence ().
Angle-resolved photoluminescence spectra from 0°, 10°, 20°, 30°, 40°, 50°, to 60° for the SiC samples (a) with and (b) without the WG resonators array.
(a) Angle-resolved reflectance spectra of the SiC sample with the spheres array. The individual spectra have been normalized and displaced by +1 for clarity. (b) The enhancement curves calculated from the luminescence intensity of the SiC sample with and without spheres array in Fig. 3. The individual spectra have been displaced by +0.2 for clarity. Arrows in (a) and (b) indicate enhancement peaks shift corresponding to the angle-dependent resonances of the WG mode. (c) The calculated reflectance spectra for oblique incidence.
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