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(a) RSM around the (103) pseudocubic reflection of the BFO capacitor. (b) Schematic illustration of the BFO capacitor structure and the measuring circuit. (c) Ferroelectric hysteresis loops measured at room temperature and frequency of 1 kHz. The inset shows the local hysteresis loop of the BFO film. (d) 2 × 2 μm2 PFM phase image. The center and border of the scanned area was upward polarized (P UP) and downward polarized (P DOWN), respectively.
(a) ΔP(t)/2P s for Ef = 170, 180, 190, 200, 210, 220, 230, 240, 250, 260, 280, 300, 320, 360 kV/cm at 200 K, respectively (not all measured curves areshown). (b) ΔP(t)/2P s for two driving fields (Ef = 230 and 360 kV/cm) at 200 K when the BFO film was in two different strain states, respectively. Theinset shows the time dependence of the relative change between two different strain states Г = [(ΔP/2P s)13.3 kV/cm−(ΔP/2P s)0] × 100%/(ΔP/2P s)0.
(a) The field dependence of Δtsw = [(tsw )13.3 kV/cm-(tsw )0] × 100%/(tsw )0 between two different strain states measured at 200 K. The plots of (b) 1/tsw vs Ef curves and (c) log(1/tsw ) vs 1/Ef curves under two different strain states, respectively. The dashed lines in the (b) and (c) are the fitting curves according to the equations shown in the two figures.
(a) The field dependence of Δtsw measured at 50, 200, 220, and 270 K, respectively. (b) The temperature dependence of the coercive field Ec and the effective threshold fields E C0 measured at different strain states.
The relative changes of the switching time tsw , the effective threshold field E C0, the velocity exponent θ, the coefficient α, and the energy barrier U between different strain states measured at various temperatures, respectively. The data for T = 270 K are not listed due to the large deviations for fitting curves.
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