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The J-V curves for as-cast and annealed devices. A distinct kink in the J-V response for the as-cast device can be seen in the fourth quadrant.
Light intensity dependence of the photocurrent for as-cast (upper) and annealed (lower) devices. Neutral density filters with optical densities (OD) of 0.1, 0.3, 0.5, 0.8, 1.0, and 2.0 were employed to reduce illumination from simulated 1 sun conditions. The power law term, b, from Eq. (1) that was fit to the curves is included in the legend.
Incident light power dependence of short circuit current density (Jsc) and a pre-factor term, α, from Eq. (2) for as-cast (upper) and annealed (lower) devices. The slope, S, of the linear fit (solid lines) to the experimental data is included.
Voltage drop as a function of photocurrent density for different levels of illumination as determined by neutral density filters (optical density = 0.1, 0.3, 0.5, 0.8, 1.0, 2.0). The voltage drop was calculated as the difference between the expected photocurrent (as fit to data with Eq. (1)) and the experimental data. Normalized photocurrent-voltage curves showing a qualitative reduction of the fourth-quadrant kink with reduced illumination intensity (inset).
Resistance calculated by dividing the voltage drop by the current for different levels of illumination. The dashed line represents the resistance at short circuit.
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